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| TSD2444 Low Vce(sat) NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 20V Ic = 1A VCE (SAT), = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSD2444CX Packing Tape & Reel Package SOT-23 Structure Epitaxial planar type. Complementary to TSB1590CX Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS DC Pulse PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit 40V 20V 5 1 1.5 (note 1) 0.225 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC / IB = 500mA / 50mA VCE = 2V, IC = 0.1A VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min 40 20 5 ---82 --- Typ -----0.2 -150 15 Max ---0.5 0.5 0.4 390 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 TSD2444 1-3 2003/12 rev. A Electrical Characteristics Curve TSD2444 2-3 2003/12 rev. A SOT-23 Mechanical Drawing A B F SOT-23 DIMENSION DIM A MILLIMETERS MIN MAX 2.80 0.30 1.70 0.25 1.2 0.89 0.08 3.04 0.50 2.30 0.65 1.60 1.30 0.17 INCHES MIN MAX 0.110 0.012 0.067 0.010 0.047 0.035 0.003 0.120 0.020 0.091 0.026 0.063 0.051 0.006 E B C D E F G G D C Marking: BS TSD2444 3-3 2003/12 rev. A |
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